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Study of CO<sub>2</sub> Adsorption on Amorphous HfO<sub>2</sub> using PTA on the Netzsch 449
EP20498
Poster Title: Study of CO2 Adsorption on Amorphous HfO2 using PTA on the Netzsch 449
Submitted on 20 Dec 2013
Author(s): Sergey Ushakov and Alexandra Sergey
Affiliations: UC Davis
Poster Views: 1,022
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Poster Information
Abstract: HfO2 is a prospective high-k replacement for SiO2 for future integrated circuits. We study energetic of amorphous and nanocrystalline hafnium oxide by high temperature oxide melt solution calorimetry to establish critical sizes where phase stability switches by surface energy terms.Summary: HfO2 is a prospective high-k replacement for SiO2 for future integrated circuits. We study energetic of amorphous and nanocrystalline hafnium oxide by high temperature oxide melt solution calorimetry to establish critical sizes where phase stability switches by surface energy terms.Report abuse »
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